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| LAB MECHANICAL DATA Dimensions in mm(inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) SEME BDS10IG BDS11IG BDS12IG SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE 123 12.07 (0.500) 19.05 (0.750) FEATURES * HERMETIC TO257 ISOLATED METAL PACKAGES * HIGH RELIABILITY * MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC * SCREENING TO CECC LEVELS * ALSO AVAILABLE IN TO220 METAL AND TO220 CERAMIC SURFACE MOUNT PACKAGES TO257 - TO257 Isolated Metal Package. Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter APPLICATIONS * POWER LINEAR AND SWITCHING APPLICATIONS * GENERAL PURPOSE POWER ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated) VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase 75C Storage Temperature Junction Temperature BDS10 60V 60V BDS11 80V 80V 5V 15A 5A 90W BDS12 100V 100V -65 TO 200C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/98 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) SEME BDS10IG BDS11IG BDS12IG Parameter ICBO Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 VEB = 5V VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V Min. Typ. Max. 500 500 500 1 1 1 1 Unit mA ICEO mA IEBO mA VCEO(sus)* VCE(sat)* VBE(sat)* VBE* hFE* fT BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current gain IC = 5A IC = 10A Transition frequency IC = 0.5A IC = 100mA IB = 0.5A IB = 2.5A IB = 2.5A VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V 60 80 100 1 3 2.5 1.5 250 150 V V V V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = -IB2 = 0.4A Max. 0.7 1.0 0.8 Unit ms ms ms THERMAL DATA RTHj-case RTHcase-sink RTHj-a Thermal resistance junction - case Thermal resistance case - heatsink ** Thermal resistance junction - ambient Max. 1.4C/W Typ. 1.0C/W Max. 80C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/98 |
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